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首页 / 产品目录 / 晶体管 - FET，MOSFET - 射频 / BSS308PEH6327XTSA1

BSS308PEH6327XTSA1

BSS308PEH6327XTSA1

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零件编号 BSS308PEH6327XTSA1
制造商 Infineon Technologies
描述 MOSFET P-Ch -30V -2A
封装 SOT-23-3
库存 36000 piece(s)
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交货时间 Can Ship Immediately
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BSS308PEH6327XTSA1 产品规格
 
Product Attribute Attribute Value Select Attribute
Manufacturer: Infineon  
Product Category: MOSFET  
RoHS:  Details  
Technology: Si  
Mounting Style: SMD/SMT  
Package / Case: SOT-23-3  
Transistor Polarity: P-Channel  
Number of Channels: 1 Channel  
Vds - Drain-Source Breakdown Voltage: 30 V  
Id - Continuous Drain Current: 2 A  
Rds On - Drain-Source Resistance: 62 mOhms  
Vgs - Gate-Source Voltage: - 20 V, + 20 V  
Vgs th - Gate-Source Threshold Voltage: 2 V  
Qg - Gate Charge: 5 nC  
Minimum Operating Temperature: - 55 C  
Maximum Operating Temperature: + 150 C  
Pd - Power Dissipation: 500 mW  
Channel Mode: Enhancement  
Qualification: AEC-Q101  
Packaging: Reel  
Packaging: Cut Tape  
Packaging: MouseReel  
Brand: Infineon Technologies  
Configuration: Single  
Fall Time: 2.8 ns  
Forward Transconductance - Min: 4.6 S  
Height: 1.1 mm  
Length: 2.9 mm  
Product Type: MOSFET  
Rise Time: 7.7 ns  
Series: BSS308  
Factory Pack Quantity: 9000  
Subcategory: MOSFETs  
Transistor Type: 1 P-Channel  
Typical Turn-Off Delay Time: 15.3 ns  
Typical Turn-On Delay Time: 5.6 ns  
Width: 1.3 mm  
Part # Aliases: BSS308PE H6327 SP000928942  
Unit Weight: 0.001411 oz

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Our experienced sales team and tech support team back our services to satisfy all our customers.

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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零件编号 制造商 描述 库存

BSS308PEH6327XTSA1

 Infineon Technologies

MOSFET P-Ch -30V -2A

 36000

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BSS308PEH6327XTSA1

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