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APTM100H80FT1G

APTM100H80FT1G

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零件编号 APTM100H80FT1G
制造商 Microsemi Corporation
描述 MOSFET 4N-CH 1000V 11A SP1
封装 SP1
库存 2,480 piece(s)
单价 Request a Quote
交货时间 Can Ship Immediately
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APTM100H80FT1G 产品规格
制造商Microsemi Corporation
类别Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
封装SP1
系列-
FET类型4 N-Channel (H-Bridge)
FET功能Standard
漏极到源极电压(Vdss)1000V (1kV)
电流 - 连续漏极(Id)@ 25°C11A
Rds On(Max)@ Id,Vgs960 mOhm @ 9A, 10V
Vgs(th)(Max)@Id5V @ 1mA
栅极电荷(Qg)(最大值)@Vgs150nC @ 10V
输入电容(Ciss)(最大值)@ Vds3876pF @ 25V
力量 - 最大208W
工作温度-40°C ~ 150°C (TJ)
安装类型Chassis Mount
包/箱SP1
供应商设备包SP1

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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零件编号 制造商 描述 库存

APTM100H80FT1G

Microsemi Corporation

MOSFET 4N-CH 1000V 11A SP1

2,480

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APTM100H80FT1G

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