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首页 / 产品目录 / 晶体管 - FET，MOSFET - 阵列 / APTC80H29T1G

APTC80H29T1G

APTC80H29T1G

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零件编号 APTC80H29T1G
制造商 Microsemi Corporation
描述 MOSFET 4N-CH 800V 15A SP1
封装 SP1
库存 6,816 piece(s)
单价 Request a Quote
交货时间 Can Ship Immediately
预计送达时间 Request a Quote
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APTC80H29T1G 产品规格
制造商Microsemi Corporation
类别Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
封装SP1
系列-
FET类型4 N-Channel (H-Bridge)
FET功能Standard
漏极到源极电压（Vdss）800V
电流 - 连续漏极（Id）@ 25°C15A
Rds On（Max）@ Id，Vgs290 mOhm @ 7.5A, 10V
Vgs（th）（Max）@Id3.9V @ 1mA
栅极电荷（Qg）（最大值）@Vgs90nC @ 10V
输入电容（Ciss）（最大值）@ Vds2254pF @ 25V
力量 - 最大156W
工作温度-40°C ~ 150°C (TJ)
安装类型Chassis Mount
包/箱SP1
供应商设备包SP1

APTC80H29T1G Guarantees

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We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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零件编号 制造商 描述 库存

APTC80H29T1G

 Microsemi Corporation

MOSFET 4N-CH 800V 15A SP1

 6,816

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APTC80H29T1G

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